4 edition of Non-stoichiometry in semiconductors found in the catalog.
Includes bibliographical references and index.
|Statement||edited by K.J. Bachmann, H.-L. Hwang, C. Schwab.|
|Contributions||Bachmann, K. J., Hwang, H.-L., Schwab, C., International Conference on Advanced Materials (1991 : Strasbourg, France)|
|LC Classifications||QC611.8.C64 S955 1991|
|The Physical Object|
|Pagination||xiv, 322 p. :|
|Number of Pages||322|
|LC Control Number||91042718|
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The diversity of the topics, as well as the extraordinary tempo in which Non-stoichiometry in Semiconductors has progressed in recent years attest to the permanent Book Edition: 1.
What is non-stoichiometry. We need you to answer this question. If you know the answer to this question, please register to join our limited beta program and start the conversation right now. Non-stoichiometry and problem of heavy doping in semiconductor phases Article in Materials Science in Semiconductor Processing 6(s 5–6)– October with 7.
UO 2 can accommodate non-stoichiometry easier than U 3 Si 2 (Middleburgh et al., ) and that will impact the relative defect populations in favor of .